NTMFS4934N
Power MOSFET
30 V, 147 A, Single N ? Channel, SO ? 8 FL
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? CPU Power Delivery, DC ? DC Converters
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
2.0 m W @ 10 V
3.0 m W @ 4.5 V
D (5,6)
I D MAX
147 A
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
30
Unit
V
Gate ? to ? Source Voltage
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
V GS
I D
P D
± 20
29.1
18.4
2.72
V
A
W
G (4)
S (1,2,3)
N ? CHANNEL MOSFET
Continuous Drain
Current R q JA ≤ 10 s
(Note 1)
Power Dissipation
R q JA ≤ 10 s (Note 1)
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Steady
State
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
T A = 25 ° C
T A = 100 ° C
T A = 25 ° C
I D
P D
I D
P D
47.5
30.0
7.23
17.1
10.8
0.93
A
W
A
W
1
SO ? 8 FLAT LEAD
CASE 488AA
STYLE 1
S
S
S
G
MARKING
DIAGRAM
D
4934N
AYWZZ
D
D
D
Continuous Drain
Current R q JC
(Note 1)
Power Dissipation
R q JC (Note 1)
Pulsed Drain Current
T C = 25 ° C
T C =100 ° C
T C = 25 ° C
T A = 25 ° C, t p = 10 m s
I D
P D
I DM
147
93
69.44
442
A
W
A
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Current Limited by Package
T A = 25 ° C
I Dmax
100
A
Operating Junction and Storage Temperature
T J ,
T STG
? 55 to
+150
° C
ORDERING INFORMATION
Source Current (Body Diode)
I S
68
A
Device
Package
Shipping ?
Drain to Source DV/DT dV/d t 6 V/ns
Single Pulse Drain ? to ? Source Avalanche E AS 205 mJ
Energy T J = 25 ° C, V DD = 24 V, V GS = 10 V,
I L = 37 A pk , L = 0.3 mH, R G = 25 W
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
NTMFS4934NT1G SO ? 8 FL 1500 /
(Pb ? Free) Tape & Reel
NTMFS4934NT3G SO ? 8 FL 5000 /
(Pb ? Free) Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
May, 2012 ? Rev. 4
1
Publication Order Number:
NTMFS4934N/D
相关PDF资料
NTMFS4935NCT3G MOSFET N-CH 30V SO8-FL
NTMFS4936NCT3G MOSFET N-CH 30V 11.6A SO-8FL
NTMFS4937NT1G MOSFET N-CH 30V 10.2A SO8 FL
NTMFS4939NT3G MOSFET N-CH 30V 9.3A SO8 FL
NTMFS4941NT3G MOSFET N-CH 30V 9A SO8 FL
NTMFS4943NT1G MOSFET N-CH 30V 8.3A SO8 FL
NTMFS4945NT3G MOSFET N-CH 30V 7.4A SO8 FL
NTMFS5830NLT1G MOSFET N-CH 40V 28A SO-8FL
相关代理商/技术参数
NTMFS4934NT3G 功能描述:MOSFET Power MOSFET 30V 147A 2m OHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4935N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 93 A, Single N−Channel, SO−8 FL
NTMFS4935NBT1G 功能描述:MOSFET NFET SO8FL 30V 93A 3.2 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4935NBT3G 功能描述:MOSFET NFET SO8FL 30V 93A 3.2 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4935NCT1G 功能描述:MOSFET TRENCH 3 S08FL, 30V NCH M RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4935NCT3G 功能描述:MOSFET N-CH 30V SO8-FL RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NTMFS4935NT1G 功能描述:MOSFET NFET SO8FL 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4935NT3G 功能描述:MOSFET NFET SO8FL 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube